SMI offers three levels of plasma enhancement to rotating or static CVD systems. First is an upstream microwave plasma column of the type shown in the figure below. Second are parallel plate configurations where the
excited plasma fills the deposition zone (these operate using any of high or low frequency plasmas and may be pulsed or oscillated to use multiple frequencies to enhance reactivity or etchability). Another option is a newly invented “full” showerhead upstream plasma source that can selectively activate precursors or process/etch gases, independently.